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| hexfet ? power mosfet v dss = 55v r ds(on) = 4.9m i d = 120a description this hexfet ? power mosfet utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. additional features of this design are a 175c junction operating temperature, fast switching speed and improved repetitive avalanche rating.these features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. s d g features advanced process technology ultra low on-resistance 175c operating temperature fast switching repetitive avalanche allowed up to tjmax lead-free automotive qualified * automotive grade absolute maximum ratings functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. !! " "" # $ %&'()* #" hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ + ### " &,+'- " . / 0 / &1*&,+' parameter units i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) i d @ t c = 100c continuous drain current, v gs @ 10v (see fig. 9) i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) i dm pulsed drain current p d @t c = 25c maximum power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy (thermally limited) mj i ar avalanche current a e ar repetitive avalanche energy mj t j operating junction and t stg storage temperature range soldering temperature, for 10 seconds thermal resistance parameter typ. max. units r jc junction-to-case ??? 0.65 r ja junction-to-ambient (pcb mount, steady state) ??? 40 a c 250 see fig.12a,12b,15,16 300 (1.6mm from case ) c/w 230 1.5 20 -55 to + 175 max. 150 100 590 120 form quantity tube 50 AUIRF1405ZS-7P tape and reel left 800 auirf1405zs-7trl orderable part number base part number package type standard pack AUIRF1405ZS-7P d2pak- 7 pin & ### " &,+'- " . / 0 / &1*&,+' repetitive rating; pulse width limited by max. junction temperature. (see fig. 11). limited by t jmax , starting t j = 25c, l=0.064mh, r g = 25 , i as = 88a, v gs =10v. part not recommended for use above this value. pulse width 1.0ms; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . limited by t jmax , see fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. this is applied to d 2 pak, when mounted on 1" square pcb ( fr-4 or g-10 material ). for recommended footprint and soldering techniques refer to application note #an-994. r is measured at t j of approximately 90c. s d g s d g static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 55 ??? ??? v ? v dss / t j breakdown voltage temp. coefficient ??? 0.054 ??? v/c r ds(on) smd static drain-to-source on-resistance ??? 3.7 4.9 m v gs(th) gate threshold voltage 2.0 ??? 4.0 v gfs forward transconductance 108 ??? ??? s i dss drain-to-source leakage current ??? ??? 20 a ??? ??? 250 i gss gate-to-source forward leakage ??? ??? 200 na gate-to-source reverse leakage ??? ??? -200 q g total gate charge ??? 150 230 nc q gs gate-to-source charge ??? 37 ??? q gd gate-to-drain ("miller") charge ??? 64 ??? t d(on) turn-on delay time ??? 16 ??? ns t r rise time ??? 140 ??? t d(off) turn-off delay time ??? 170 ??? t f fall time ??? 130 ??? l d internal drain inductance ??? 4.5 ??? nh between lead, 6mm (0.25in.) l s internal source inductance ??? 7.5 ??? from package and center of die contact c iss input capacitance ??? 5360 ??? pf c oss output capacitance ??? 1310 ??? c rss reverse transfer capacitance ??? 340 ??? c oss output capacitance ??? 6080 ??? c oss output capacitance ??? 920 ??? c oss eff. effective output capacitance ??? 1700 ??? diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? 150 (body diode) a i sm pulsed source current ??? ??? 590 (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 63 95 ns q rr reverse recovery charge ??? 160 240 nc v ds = v gs , i d = 150 a v ds = 55v, v gs = 0v v ds = 55v, v gs = 0v, t j = 125c conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 88a t j = 25c, i f = 88a, v dd = 28v di/dt = 100a/ s t j = 25c, i s = 88a, v gs = 0v showing the integral reverse p-n junction diode. v gs = 0v, v ds = 1.0v, ? = 1.0mhz v gs = 10v mosfet symbol v gs = 0v v ds = 25v v gs = 0v, v ds = 44v, ? = 1.0mhz conditions v gs = 0v, v ds = 0v to 44v ? = 1.0mhz, see fig. 5 r g = 5.0 i d = 88a v ds = 10v, i d = 88a v dd = 28v i d = 88a v gs = 20v v gs = -20v v ds = 44v v gs = 10v 2 ### " &,+'- " . / 0 / &1*&,+' fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. typical forward transconductance vs. drain current 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 60 s pulse width tj = 25c 4.5v 0 2 4 6 8 10 12 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 175c v ds = 25v 60 s pulse width 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v 60 s pulse width tj = 175c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 0 25 50 75 100 125 150 175 200 i d ,drain-to-source current (a) 0 25 50 75 100 125 150 175 200 g f s , f o r w a r d t r a n s c o n d u c t a n c e ( s ) t j = 25c t j = 175c v ds = 10v 380 s pulse width 3 ### " &,+'- " . / 0 / &1*&,+' fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 50 100 150 200 q g total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 44v v ds = 28v i d = 88a 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0.0 0.5 1.0 1.5 2.0 2.5 v sd , source-to-drain voltage (v) 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 1 10 100 1000 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) tc = 25c tj = 175c single pulse 100 sec 1msec 10msec dc ' ### " &,+'- " . / 0 / &1*&,+' fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10. normalized on-resistance vs. temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 88a v gs = 10v 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.1707 0.000235 0.1923 0.000791 0.2885 0.008193 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci i / ri ci= i / ri 25 50 75 100 125 150 175 t c , case temperature (c) 0 25 50 75 100 125 150 i d , d r a i n c u r r e n t ( a ) 4 ### " &,+'- " . / 0 / &1*&,+' q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 14. threshold voltage vs. temperature r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v v gs 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 200 400 600 800 1000 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 14a 23a bottom 88a -75 -50 -25 0 25 50 75 100 125 150 175 200 t j , temperature ( c ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 150 a i d = 250 a i d = 1.0ma i d = 1.0a 1 ### " &,+'- " . / 0 / &1*&,+' fig 15. typical avalanche current vs.pulsewidth fig 16. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 12a, 12b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 50 100 150 200 250 300 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1% duty cycle i d = 88a 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav, assuming ? j = 25c and tstart = 150c. 0.01 allowed avalanche current vs avalanche pulsewidth, tav, assuming tj = 150c and tstart =25c (single pulse) 5 ### " &,+'- " . / 0 / &1*&,+' fig 17. for n-channel hexfet power mosfets ? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - ? ! ? " #$## ? % & & ? #$## ' $ v ds 90% 10% v gs t d(on) t r t d(off) t f () 1 * % 0.1 % !"!#! $ + - fig 18a. switching time test circuit fig 18b. switching time waveforms 6 ### " &,+'- " . / 0 / &1*&,+' d 2 pak - 7 pin package outline dimensions are shown in millimeters (inches) http://www.irf.com/package/ +, ### " &,+'- " . / 0 / &1*&,+' d 2 pak - 7 pin tape and reel d 2 pak - 7 pin part marking information ! ""! " " #!# $ % http://www.irf.com/package/ ++ ### " &,+'- " . / 0 / &1*&,+' ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability ?? highest passing voltage. qualification information ? moisture sensitivity level 7l-d2 pak msl1 rohs compliant yes esd machine model class m4(425v) ?? (per aec-q101-002) human body model class h1c(2000v) ?? (per aec-q101-001) charged device model class c5(1125v) ?? (per aec-q101-005) qualification level automotive (per aec-q101) comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. +& ### " &,+'- " . / 0 / &1*&,+' unless specifically designated for the automotive market, international rectifier corporation and its subsidiaries (ir) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. part numbers designated with the ?au? prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. all products are sold subject to ir?s terms and conditions of sale supplied at the time of order acknowledgment. ir warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with ir?s standard warranty. testing and other quality control techniques are used to the extent ir deems necessary to support this warranty. except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. ir assumes no liability for applications assistance or customer product design. customers are responsible for their products and applications using ir components. to minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. reproduction of ir information in ir data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. reproduction of this information with alterations is an unfair and deceptive business practice. ir is not responsible or liable for such altered documentation. information of third parties may be subject to additional restrictions. resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or service voids all express and any implied warranties for the associated ir product or service and is an unfair and deceptive business practice. ir is not responsible or liable for any such statements. ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the ir product could create a situation where personal injury or death may occur. should buyer purchase or use ir products for any such unintended or unauthorized application, buyer shall indemnify and hold international rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ir was negligent regarding the design or manufacture of the product. only products certified as military grade by the defense logistics agency (dla) of the us department of defense, are designed and manufactured to meet dla military specifications required by certain military, aerospace or other applications. buyers acknowledge and agree that any use of ir products not certified by dla as military-grade, in applications requiring military grade products, is solely at the buyer?s own risk and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. ir products are neither designed nor intended for use in automotive applications or environments unless the specific ir products are designated by ir as compliant with iso/ts 16949 requirements and bear a part number including the designation ?au?. buyers acknowledge and agree that, if they use any non-designated products in automotive applications, ir will not be responsible for any failure to meet such requirements. for technical support, please contact ir?s technical assistance center http://www.irf.com/technical-info/ world headquarters: 101 n. sepulveda blvd., el segundo, california 90245 tel: (310) 252-7105 +2 ### " &,+'- " . / 0 / &1*&,+' date comments 2/27/2015 ? corrected part number for trl from "AUIRF1405ZS-7Ptrl" to "auirf1405zs-7trl" on page1. revision history |
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